Infineon IRLL024NTRPBF: A Compact N-Channel HEXFET Power MOSFET in a D-Pak Package

Release date:2025-10-29 Number of clicks:157

Infineon IRLL024NTRPBF: A Compact N-Channel HEXFET Power MOSFET in a D-Pak Package

In the realm of power electronics, efficiency, size, and thermal performance are paramount. The Infineon IRLL024NTRPBF stands out as a compelling solution, encapsulating robust performance into a remarkably compact form factor. This N-Channel HEXFET Power MOSFET, housed in the industry-standard D-Pak (TO-252) package, is engineered to meet the demanding requirements of modern switch-mode power supplies, motor control, and high-efficiency DC-DC converters.

At the heart of this device's performance is its exceptionally low on-state resistance (RDS(on)) of just 24 mΩ. This critical characteristic is a primary driver of efficiency, as it directly minimizes conduction losses when the MOSFET is fully switched on. By reducing power dissipation as heat, the component not only enhances the overall efficiency of the circuit but also alleviates thermal management challenges. This low RDS(on) is achieved through Infineon's advanced HEXFET technology, which optimizes silicon design to maximize the channel density and improve switching performance.

The D-Pak surface-mount package offers a significant advantage for space-constrained applications. While compact, it features an integrated tab that is integral for thermal management. This design allows for efficient transfer of heat from the silicon die to the printed circuit board (PCB), enabling the device to handle a continuous drain current (ID) of up to 17 A. Designers can leverage this package to achieve high power density without sacrificing thermal reliability or resorting to larger, bulkier components.

Furthermore, the IRLL024NTRPBF is characterized by its fast switching speed, which is essential for high-frequency operation in switching regulators. This capability helps to reduce the size of associated passive components like inductors and capacitors, leading to more compact and cost-effective overall system designs. The device also features a low gate threshold voltage, making it compatible with low-voltage drive circuits from microcontrollers and logic ICs, thereby simplifying the driving stage.

ICGOOODFIND: The Infineon IRLL024NTRPBF is a highly efficient and compact power switching solution that masterfully balances low conduction losses, robust current handling, and effective thermal performance in a small SMD package, making it an ideal choice for modern, high-density power conversion applications.

Keywords: HEXFET MOSFET, Low RDS(on), D-Pak Package, Power Efficiency, Fast Switching

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