Harnessing High-Efficiency Power Conversion with Infineon’s IRFH5053TRPBF 40V N-Channel MOSFET
In the realm of power electronics, the demand for components that offer high efficiency, thermal performance, and compact form factors continues to grow. Addressing these needs, Infineon Technologies introduces the IRFH5053TRPBF, a 40V Single N-Channel HEXFET Power MOSFET housed in a space-saving PQFN 3x3mm package. This device is engineered to deliver superior switching performance and power density, making it an ideal solution for a wide range of applications including synchronous rectification, DC-DC converters, motor drives, and load switching systems.
A key highlight of the IRFH5053TRPBF is its exceptionally low on-state resistance (RDS(on)), which is rated at just 1.8 mΩ maximum at 10 V. This ultra-low resistance minimizes conduction losses, thereby improving overall system efficiency and reducing heat generation. Combined with its high continuous drain current capability of 100 A, this MOSFET ensures robust performance even under demanding conditions.
The component is built using Infineon’s advanced HEXFET technology, which offers optimized switching characteristics and enhanced avalanche ruggedness. The MOSFET also features low gate charge (Qg) and low reverse recovery charge, contributing to reduced switching losses and enabling higher frequency operation. This is particularly beneficial in modern power supply designs where increasing switching frequencies allows for the use of smaller passive components.
Thermal management is another critical area where the IRFH5053TRPBF excels. The PQFN (Power Quad Flat No-Lead) 3x3mm package provides a low thermal resistance path from the die to the PCB, facilitating effective heat dissipation without the need for bulky heatsinks. This compact footprint is especially advantageous in space-constrained applications such as server power supplies, telecommunications hardware, and automotive systems.
Furthermore, the device is designed with a 100% avalanche tested structure, ensuring high reliability and durability under repetitive overvoltage stress conditions. It is also compliant with RoHS directives, aligning with global environmental standards.
In summary, the Infineon IRFH5053TRPBF stands out as a high-performance power MOSFET that combines low conduction losses, efficient switching, and excellent thermal properties in a miniature package. It empowers designers to create more efficient, compact, and reliable power management solutions.
ICGOOFind: The Infineon IRFH5053TRPBF MOSFET sets a benchmark in power semiconductor design with its ultra-low RDS(on), high current capability, and superior thermal performance in a PQFN 3x3mm package, making it a top choice for next-generation power systems.
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Keywords:
Power MOSFET, Low RDS(on), HEXFET Technology, PQFN Package, Synchronous Rectification
